dc.contributor.author
Reparaz, J. S.
dc.contributor.author
Callsen, G.
dc.contributor.author
Wagner, M. R.
dc.contributor.author
Güell Vilà, Frank
dc.contributor.author
Morante i Lleonart, Joan Ramon
dc.contributor.author
Sotomayor Torres, Clivia M.
dc.contributor.author
Hoffmann, A.
dc.date.issued
2014-03-24T10:58:12Z
dc.date.issued
2014-03-24T10:58:12Z
dc.date.issued
2014-03-24T10:58:12Z
dc.identifier
https://hdl.handle.net/2445/52832
dc.description.abstract
We investigate the spatial dependence of the exciton lifetimes in single ZnO nanowires. We have found that the free exciton and bound exciton lifetimes exhibit a maximum at the center of nanowires, while they decrease by 30% towards the tips. This dependence is explained by considering the cavity-like properties of the nanowires in combination with the Purcell effect. We show that the lifetime of the bound-excitons scales with the localization energy to the power of 3/2, which validates the model of Rashba and Gurgenishvili at the nanoscale.
dc.format
application/pdf
dc.publisher
AIP Publishing
dc.relation
Reproducció del document publicat a: http://dx.doi.org/10.1063/1.4808441
dc.relation
APL Materials, 2013, vol. 1, p. 012103-1-012103-7
dc.relation
http://dx.doi.org/10.1063/1.4808441
dc.rights
cc-by (c) Reparaz, J. S. et al., 2013
dc.rights
http://creativecommons.org/licenses/by/3.0/es
dc.rights
info:eu-repo/semantics/openAccess
dc.source
Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)
dc.subject
Nanoelectrònica
dc.subject
Semiconductors
dc.subject
Optoelectrònica
dc.subject
Nanoelectronics
dc.subject
Semiconductors
dc.subject
Optoelectronics
dc.title
Spatial mapping of exciton lifetimes in single ZnO nanowires
dc.type
info:eu-repo/semantics/article
dc.type
info:eu-repo/semantics/publishedVersion
