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Title:
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Lithography aware regular cell design based on a predictive technology model
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Author:
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Gómez Fernández, Sergio; Moll Echeto, Francisco de Borja
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Other authors:
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Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica; Universitat Politècnica de Catalunya. HIPICS - Grup de Circuits i Sistemes Integrats d'Altes Prestacions |
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Abstract:
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As semiconductor technology advances into the nanoscale era, optical effects such as channel narrowing, corner rounding or line-end pullback are critical to accomplish circuit yield specifications. It is well-demonstrated that layout regularity reduces the increasing impact of process variations on circuit performance and reliability. The aim of this paper is to present the layout design of a regular cell based on 1-D elements which reduces lithography perturbations (ALARC). We depict several undesirable lithography effects and how these distortions determine several layout parameters in order to achieve the required line-pattern resolution. Furthermore, it is shown how the measurement
of leakage power consumption based on ideal layout is not a precise metric to evaluate circuit performance, especially for low power designs. Finally, the impact of lithography patterns on delay and leakage consumption of a typical cell is provided. |
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Abstract:
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Peer Reviewed |
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Subject(s):
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-Àrees temàtiques de la UPC::Enginyeria electrònica::Electrònica de potència
-Design for Manufacturability
-DFM
-Lithography simulation
-Manufacturabilitat |
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Rights:
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Document type:
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Article - Published version
Article |
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