dc.contributor.author
Jiménez Jiménez, David
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Suñé, Jordi,
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Miranda, Enrique
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Tsurumaki-Fukuchi, Atsushi
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Yamada, Hiroyuki
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Sawa, Akihito
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American Institute of Physics
dc.identifier
https://ddd.uab.cat/record/115883
dc.identifier
urn:10.1063/1.4855155
dc.identifier
urn:oai:ddd.uab.cat:115883
dc.identifier
urn:recercauab:ARE-74727
dc.identifier
urn:articleid:10773118v103n26p263502-1
dc.identifier
urn:scopus_id:84891613994
dc.identifier
urn:wos_id:000329977400077
dc.identifier
urn:altmetric_id:2099121
dc.identifier
urn:oai:egreta.uab.cat:publications/fc2cd897-03a3-406d-87a7-d0cde1b6cce9
dc.description.abstract
We demonstrate the feasibility of multilevel recording in Pt/Bi1-δFeO3/SrRuO3 capacitors using the ferroelectric resistive switching phenomenon exhibited by the Pt/Bi1-δFeO3 interface. A tunable population of up and down ferroelectric domains able to modulate the Schottky barrier height at the Pt/Bi1-δFeO3 interface can be achieved by means of either a collection of SET/RESET voltages or current compliances. This programming scheme gives rise to well defined resistance states, which form the basis for a multilevel storage nonvolatile memory.
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application/pdf
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Applied physics letters ; Vol. 103, Issue 26 (December 2013), p. 263502/1-263502/4
dc.rights
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dc.rights
https://rightsstatements.org/vocab/InC/1.0/
dc.subject
Ferroelectric elements
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Fixed capacitors
dc.title
Multilevel recording in Bi-deficient Pt/BFO/SRO heterostructures based on ferroelectric resistive switching targeting high-density information storage in nonvolatile memories
