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Injected charge to recovery as a parameter to characterize the breakdown reversibility of ultrathin HfSiON gate dielectric

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Author

Crespo Yepes, Albert

Martin Martinez, Javier

Rothschild, A.

Rodríguez Martínez, Rosana

Nafría i Maqueda, Montserrat

Aymerich Humet, Xavier

Publication date

2011

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Abstract

The injected charge to recovery (QR) is presented as a parameter to characterize the dielectric breakdown (BD)reversibility in MOSFETs with ultrathin high-k hafnium based gate dielectric. The procedure to recover the dielectric is explained and the dependences of QR with the current limit during BD, the polarity of the BD-recovery stresses and the number of stress cycles are analyzed.

Document Type

Article

Language

English

Subjects and keywords

Dielectric breakdown (BD); BD reversibility; High-k; Reliability; Resistive switching; CMOS

Publisher

 

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Ministerio de Ciencia e Innovación TEC2007-61294/MIC

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IEEE transactions on device and materials reliability ; Vol. 11, Issue 1 (March 2011), p. 126-130

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DIDL MARC MARC_CCUC METS OAI_DC ORE QDC RDF

Rights

open access

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Articles escrits per personal UAB o publicats per la universitat [88071]