Universitat Politècnica de Catalunya
Universitat Politècnica de Catalunya. Departament de Teoria del Senyal i Comunicacions
Universitat Politècnica de Catalunya. RF&MW - Grup de Recerca de sistemes, dispositius i materials de RF i microones
1999
A novel method for measuring the four noise parameters of a field-effect transistor (FET) is presented. It is based on the determination of its intrinsic noise matrix elements [C11INT, C22INT, Re(C12 INT), Im(C12INT)] by fitting the measured device noise figure for a matched source reflection coefficient (F50) at a number of frequency points, thus, a tuner is not required. In contrast to previous works, no restrictive assumptions are made on the intrinsic noise sources. The receiver full-noise calibration is easily performed by using a set of coaxial and on-wafer standards that are commonly available in a microwave laboratory, thus, an expensive broad-band tuner is not required for calibration either. On-wafer experimental verification up to 26 GHz is presented and a comparison with other F50-based and tuner-based methods is given. As an application, the dependence of the FET intrinsic noise sources as a function of the bias drain-current and gate-length is obtained.
Peer Reviewed
Article
English
Àrees temàtiques de la UPC::Enginyeria de la telecomunicació::Radiocomunicació i exploració electromagnètica::Circuits de microones, radiofreqüència i ones mil·limètriques; Microwave measurements; calibration; electric noise measurement; equivalent circuits; microwave field effect transistors; microwave measurement; semiconductor device measurement; semiconductor device models; semiconductor device noise; Microones -- Dispositius
IEEE
Open Access
E-prints [72986]
