1. Home
  2. Universitat de Barcelona
  3. Física Aplicada
  4. View Item

On the determination of the interface density of states in a-Si:H/a-SiC:H multilayers

Author

Bertomeu i Balagueró, Joan

Puigdollers i González, Joaquim

Asensi López, José Miguel

Andreu i Batallé, Jordi

Publication date

2013-11-05T12:53:27Z

2013-11-05T12:53:27Z

1993

2013-11-05T12:53:27Z

Share

Abstract

This paper deals with the determination of the interface density of states in amorphous silicon-based multilayers. Photothermal deflection spectroscopy is used to characterize two series of aSi:H/aSi1-xCx:H multilayers, and a new approach in the treatment of experimental dada is used in order to obtain accurate results. From this approach, an upper limit of 10^10 cm-2 is determined for the interface density of states.

Document Type

Article

Accepted version

Language

English

Subjects and keywords

Semiconductors amorfs; Optoelectrònica; Espectroscòpia; Silici; Semimetalls; Amorphous semiconductors; Optoelectronics; Spectrum analysis; Silicon; Semimetals

Publisher

Elsevier B.V.

Related items

Versió postprint del document publicat a: http://dx.doi.org/10.1016/0022-3093(93)91133-N

Journal of non-Crystalline Solids, 1993, vol. 164-166, num. 2, p. 861-864

http://dx.doi.org/10.1016/0022-3093(93)91133-N

Recommended citation

This citation was generated automatically.

Export

DIDL MARC MARC_CCUC METS OAI_DC ORE QDC RDF

Rights

(c) Elsevier B.V., 1993

This item appears in the following Collection(s)

Física Aplicada [556]

ISGlobal - Institut de Salut Global de Barcelona [61308]