dc.contributor.author
Bertomeu i Balagueró, Joan
dc.contributor.author
Puigdollers i González, Joaquim
dc.contributor.author
Asensi López, José Miguel
dc.contributor.author
Andreu i Batallé, Jordi
dc.date.issued
2013-11-05T12:53:27Z
dc.date.issued
2013-11-05T12:53:27Z
dc.date.issued
2013-11-05T12:53:27Z
dc.identifier
https://hdl.handle.net/2445/47504
dc.description.abstract
This paper deals with the determination of the interface density of states in amorphous silicon-based multilayers. Photothermal deflection spectroscopy is used to characterize two series of aSi:H/aSi1-xCx:H multilayers, and a new approach in the treatment of experimental dada is used in order to obtain accurate results. From this approach, an upper limit of 10^10 cm-2 is determined for the interface density of states.
dc.format
application/pdf
dc.publisher
Elsevier B.V.
dc.relation
Versió postprint del document publicat a: http://dx.doi.org/10.1016/0022-3093(93)91133-N
dc.relation
Journal of non-Crystalline Solids, 1993, vol. 164-166, num. 2, p. 861-864
dc.relation
http://dx.doi.org/10.1016/0022-3093(93)91133-N
dc.rights
(c) Elsevier B.V., 1993
dc.rights
info:eu-repo/semantics/openAccess
dc.source
Articles publicats en revistes (Física Aplicada)
dc.subject
Semiconductors amorfs
dc.subject
Optoelectrònica
dc.subject
Espectroscòpia
dc.subject
Amorphous semiconductors
dc.subject
Optoelectronics
dc.subject
Spectrum analysis
dc.title
On the determination of the interface density of states in a-Si:H/a-SiC:H multilayers
dc.type
info:eu-repo/semantics/article
dc.type
info:eu-repo/semantics/acceptedVersion
