2016-05-23T13:50:00Z
2016-05-23T13:50:00Z
2000
2016-05-11T16:58:30Z
The growth mechanisms of microcrystalline silicon thin films at low temperatures (100-250°C) by plasma CVD are still a matter of debate. We have shown that ue-Si:H formation proceeds through four phases (incubation, nucleation, growth and steady state) and that hydrogen plays a key role in this process, particularly during the incubation phase in which hydrogen modifies the amorphous silicon network and forms a highly porous phase where nucleation takes place. In this study we combine in-situ ellipsometry and dark conductivity measurements with ex-situ high resolution transmission electron microscopy to improve our understanding of microcrystalline silicon formation.
Article
Versió acceptada
Anglès
Silici; Hidrogen; Temperatures baixes; Pel·lícules fines; Silicon; Hydrogen; Low temperatures; Thin films
Elsevier B.V.
Versió postprint del document publicat a: http://dx.doi.org/10.1016/S0921-5107(99)00324-4
Materials Science and Engineering B-Solid State Materials for Advanced Technology, 2000, vol. 69-70, p. 559-563
http://dx.doi.org/10.1016/S0921-5107(99)00324-4
(c) Elsevier B.V., 2000