Relaxation and derelaxation of pure and hydrogenated amorphous silicon during thermal annealing experiments

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Títol:	Relaxation and derelaxation of pure and hydrogenated amorphous silicon during thermal annealing experiments
Autor/a:	Kail, Fatiha; Farjas Silva, Jordi; Roura Grabulosa, Pere; Secouard, Christopher; Nos, Oriol; Bertomeu, Joan Prat; Alzina, F.; Roca i Cabarrocas, Pere
Abstract:	The structural relaxation of pure amorphous silicon (a-Si) and hydrogenated amorphous silicon (a-Si:H) materials, that occurs during thermal annealing experiments, has been analyzed by Raman spectroscopy and differential scanning calorimetry. Unlike a-Si, the heat evolved from a-Si:H cannot be explained by relaxation of the Si-Si network strain but it reveals a derelaxation of the bond angle strain. Since the state of relaxation after annealing is very similar for pure and hydrogenated materials, our results give strong experimental support to the predicted configurational gap between a-Si and crystalline silicon
Matèries:	-Amorphous semiconductors -Espectroscòpia Raman -Hidrogenació -Semiconductors amorfs -Silici -Hydrogenation -Raman spectroscopy
Drets:	Tots els drets reservats
Tipus de document:	Article Article - Versió publicada
Publicat per:	American Institute of Physics
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Rath, Chandana; Farjas Silva, Jordi; Roura Grabulosa, Pere; Kail, Fatiha; Roca i Cabarrocas, Pere; Bertrán Serra, Enric

Kail, Fatiha; Farjas Silva, Jordi; Roura Grabulosa, Pere

Roura Grabulosa, Pere; Farjas Silva, Jordi; Rath, Chandana; Serra-Miralles, J.; Bertrán Serra, Enric; Roca i Cabarrocas, Pere

Roura Grabulosa, Pere; Farjas Silva, Jordi; Roca i Cabarrocas, Pere

Roura Grabulosa, Pere; Taïr, Fadila; Farjas Silva, Jordi; Roca i Cabarrocas, Pere

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